| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1591684 | Solid State Communications | 2015 | 5 Pages |
•MnxSi1−x films with different Mn concentration were prepared by magnetron sputtering.•The crystal lattice constant of MnxSi1−x films is larger than that of Mn-undoped Si film.•All films have ferromagnetism at room temperature.•The ferromagnetic exchange coupling is hole mediated.
MnxSi1−x films with different Mn concentration (x=0.10, 0.12, 0.13, 0.15) were prepared by magnetron sputtering. Their structural and magnetic properties have been studied. It is found that all films had Si cubic structure, and the crystal lattice constant is larger than that of Mn-undoped Si film. Magnetic and electrical measurements indicate that all films have ferromagnetism at room temperature, and the magnetization decreases with hole concentration, suggesting that the ferromagnetic exchange coupling is hole mediated.
