| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1591752 | Solid State Communications | 2014 | 4 Pages |
Abstract
La0.8Ca0.2MnO3 thin film grown on 0.67Pb(Mg1/3Nb2/3)O3-0.33PbTiO3 (PMN-PT) substrate has shown very interesting transport properties, which is modulated by the ferroelectric polarization switching in the substrate. The ferroelectric poling reduces the in-plane strain by about 0.135% with the applied piezovoltage of 500Â V to PMN-PT substrate. The resistance is lowered and the metal-insulator transition temperature (Tp) is increased due to the reduced in-plane strain. Moreover, it is shown that the ferroelectric field effect competes strongly with the strain effect especially when the temperature is lowered below Tp in our film.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Qiyun Xie, Zhangyin Zhai, Xiaoshan Wu, Ju Gao,