| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1591874 | Solid State Communications | 2014 | 4 Pages |
•White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film is observed.•The resistive switching effect becomes stronger with the annealing temperature increasing.•The resistive switching shows a strong dependence on the thickness of the [BaTiO3/γ-Fe2O3] layer.
White-light-controlled resistive switching effect in [BaTiO3/γ-Fe2O3]/ZnO film was investigated. Resistive switching effect in the [BaTiO3/γ-Fe2O3]/ZnO film was observed. The resistive switching effect becomes stronger when subjected to white light irradiation. In addition, the resistive switching effect becomes stronger with increase in annealed temperature. At the same time, resistive switching shows a strong dependence on the thickness of the [BaTiO3/γ-Fe2O3] layer.
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