| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592330 | Solid State Communications | 2013 | 5 Pages |
Abstract
The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrödinger-Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
K. Elibol, G. Atmaca, P. Tasli, S.B. Lisesivdin,