Article ID Journal Published Year Pages File Type
1592364 Solid State Communications 2013 5 Pages PDF
Abstract

•Preparation of arsenic-doped p-type ZnO films by sol–gel spin coating synthesis.•Improvement of crystallinity and increase in the optical bandgap energy.•Increase in the carrier concentration and mobility with decrease in the resistivity to 3.99×10-3 Ω cm.

Arsenic-doped ZnO films were prepared by adding As2O3 to sol–gel ZnO spin coating synthesis. The preferential (002) orientation improved, and the grain size of ZnO lattice increased with As-doping in ZnO films. UV transmittance over 70% with a blue shift was observed after As-doping. In particular, ZnO film with an As concentration of 6.7 at% showed a carrier concentration of 1.62×1019/cm3, mobility of 94.0 cm2/Vs, and resistivity of 3.99×10−3 Ω cm. It was suggested that formation of As–2VZn increased the carrier concentration and induced the blue shift, and the increase in grain size increased the mobility of p-type ZnO films.

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Physical Sciences and Engineering Materials Science Materials Science (General)
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