| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592401 | Solid State Communications | 2013 | 4 Pages |
Abstract
⺠We found that the conductance of the SFET exhibits an excellent switching effect as the strength of barrier varies. ⺠We also found that the conductance of the SFET exhibits double switching effect as the strength of SOC varies. ⺠We found that the application of external magnetic field will enhance the switching effect in SFET.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jun Yang, Kai-Ming Jiang, Wen-Yuan Wu, Lei Chen,