| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592455 | Solid State Communications | 2013 | 5 Pages |
Abstract
The influence of uniaxial stress on the electronic T13(F)→T23(F) transitions of Ni2+Ni2+ (d8) in ZnO at 4216, 4240, and 4247 cm−1 is studied. It is shown that the split pattern and polarized properties of IR absorption lines are consistent with a dynamic Jahn–Teller effect in the T23(F) state of the defect.
► The influence of uniaxial stress on substitutional Ni in ZnO is studied. ► A stress Hamiltonian of the defect was constructed. ► Split pattern is consistent with a dynamic Jahn–Teller effect of Ni.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
E.V. Lavrov, F. Herklotz, Y.S. Kutin,