| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592486 | Solid State Communications | 2013 | 4 Pages |
We have studied the effect of stress on the magnetic properties of ferromagnetic (Ga,Mn)As diluted magnetic semiconductor. We show that the magnetization of a thin ferromagnetic (Ga,Mn)As layer can be manipulated by uniaxial stress applied in its plane. The effect of stress manifests itself in spin depolarization of holes and stabilizing the easy axis in the direction of the applied stress. The developed theoretical model, assuming stress induced mixing of Mn acceptor-bound hole (or impurity-band bound hole) wave functions, well describes the observed photoluminescence polarization properties in a magnetic field.
► The effect of uniaxial stress on magnetization of FM(Ga,Mn)As is studied. ► The easy axis of magnetization is stabilized in the direction of the applied stress. ► Theory of this effect is presented. ► The magnetostriction constant of FM (Ga,Mn)As is determined.
