| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592488 | Solid State Communications | 2013 | 4 Pages |
Ag–N dual-acceptors doped p-type ZnO films were grown on glass substrates by the sol–gel method. The influence of dual-doping on the structural, electrical, and optical properties of samples was investigated in detail. The p-type conductivity of ZnO:(Ag,N) film is long-time stable. The resistivity of dual-doped ZnO:(Ag,N) film is much lower than that of mono-doped ZnO:Ag and ZnO:N films. ZnO homostructural p–n junction was fabricated by depositing an n-type ZnO layer on a p-type ZnO:(Ag,N) layer. The current–voltage characteristics show typical rectifying behaviors. Moreover, the ZnO:(Ag,N) film exhibits a good c-axis orientation, a high transmittance in the visible region, and a strong ultraviolet emission at room temperature.
► Ag–N dual-acceptors doped p-type ZnO films were grown on glass. ► Resistivity of dual-doped film is much lower than that of mono-doped films. ► The p-type behavior of ZnO:(Ag, N) film is long-time stable.
