| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592489 | Solid State Communications | 2013 | 5 Pages |
We study the electrical transport properties of F-doped SnO2 thin films in a temperature range from 12 to 300 K. Two samples exhibit metallic characteristics in high temperature ranges, where the phonon-dominated scattering is the main conduction mechanism. In the low temperature range below 60 K, the negative magnetoresistivity resulting from the weak localization effect is observed. Applying weak-localization theory, we have obtained the inelastic scattering time. The obtained inelastic scattering time is proportional to T−3, indicating that the electron–phonon interaction is main dephasing mechanism for electrons.
► We study the electrical transport properties of F-doped SnO2 thin films. ► The phonon-dominated scattering is the main conduction mechanism in high temperature ranges. ► In the low temperature ranges, the weak localization effect is observed, from which the inelastic scattering time is extracted. ► The electron–phonon interaction is the main dephasing mechanism for electrons.
