Article ID Journal Published Year Pages File Type
1592630 Solid State Communications 2013 5 Pages PDF
Abstract

Using the first principles DFT calculations, we have elucidated the electronic basis of the α→ω and the ω→β transitions in group IVB elements. After considering several possible factors that could give rise to the structural stability of a particular crystal structure, the changes in the band structure energy due to Peierls–Jahn–Teller distortion and crystal-field effects on sub orbital of d bands coupled with Ewald energy differences have been identified as the causes for these transitions. The role of van Hove singularities and consequent electronic topological transitions has also been examined.

► Electronic basis of phase transitions in Group IV B elements has been given. ► This is related to pseudo-gaps in the respective density of states. ► Density functional theory is employed. ► Symmetry breaking, crystal fields and van Hove singularities are factors cosidered. ► Direct α→β phase change in the latest group IVB element Rf is rationalized.

Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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