| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592777 | Solid State Communications | 2012 | 6 Pages |
The zero energy modes induced by vacancies in ABC-stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with Bernal stacking. The electronic modification induced in the sample by the new vacancy states is characterised by computing the local density of states and their localisation properties are studied by the inverse participation ratio. We also analyse the situation in the presence of a gap in the spectrum due to a perpendicular electric field.
► We have calculated the zero energy modes induced by vacancies in ABC-stacked trilayers. ► We have analysed the situation in the presence of a gap. ► In order to characterize the zero energy states, local density of states and inversion participation ratios have been computed.
