Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1592788 | Solid State Communications | 2012 | 5 Pages |
Abstract
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into nn-type Ge(001) substrates with electron densities 2×1016 ► We observe spin accumulation in Ge at room temperature. ► Different dopings are used to confirm spin accumulation in the Ge substrate. ► The three-terminal Hanle effect has been used to measure spin accumulation. ► There is a direct correlation between spin lifetime and substrate doping. ► The magnitude of the spin accumulation matches theory for low doping.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
A.T. Hanbicki, S.-F. Cheng, R. Goswami, O.M.J. van ‘t Erve, B.T. Jonker,