| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592845 | Solid State Communications | 2012 | 5 Pages |
A new Cu/nn-InP Schottky junction with organic dye (PSP) interlayer has been formed by using a solution cast process. An effective barrier height as high as 0.82 eV has been achieved for Cu/PSP/nn-InP Schottky diodes, which have good current–voltage (I–V) characteristics. This good performance is attributed to the effect of formation of interfacial organic thin layer between Cu and nn-InP. By using capacitance–voltage measurement of the Cu/PSP/nn-InP Schottky diode the diffusion potential and the barrier height have been calculated as 0.73 V and 0.86 eV, respectively. From the I–V measurement of the diode under illumination, short circuit current (Isc) and open circuit voltage (Voc) have been extracted as 0.33 μA and 150 mV, respectively.
► A new Cu/PSP/nn-InP junction has been formed by using a solution cast process. ► A good rectifying behavior of the device (which is better than Cu/nn-InP) has been seen. ► A high effective barrier height of the device has been obtained as 0.82 eV. ► The device showed photovoltaic properties.
