Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1592852 | Solid State Communications | 2012 | 4 Pages |
Abstract
A new technique has been developed for measuring the T1T1 spin lifetime of electrons, and should have near universal applicability among III–V semiconductors. The technique has been applied to a lightly doped GaAs sample with n=3×1014cm−3. Spin decays were measured for fields from 0.5 to 7 T, at temperatures of 1.5 and 5 K. The spin lifetimes were shorter than expected, possibly due to compensation in the sample.
► Broadly-applicable new technique for measuring T1T1 spin lifetime. ► Technique allows for arbitrarily long time scales. ► Results on a lightly-doped sample indicate spin relaxation due to compensation effects.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
J.S. Colton, K. Clark, D. Meyer, T. Park, D. Smith, S. Thalman,