| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592857 | Solid State Communications | 2012 | 5 Pages |
The effects of p-type doping on the optical properties of self-organized InAs/GaAs quantum dots (QDs) were investigated by both micro-photoluminescence and degenerated pump–probe reflection measurements. As compared to undoped InAs/GaAs QDs, it was observed that the transitions between the ground and the first excited states of electrons and holes levels appeared at higher energies for p-doped InAs/GaAs QDs. In addition, the PL intensities for both undoped and p-doped QDs were found to decrease when the excitation power exceeded a critical value. The critical excitation power for p-doped QDs appeared to be much lower than that for undoped ones. In the pump–probe experiments, it was revealed that the value and sign of the differential reflectivity depends strongly on excitation wavelength. P-doped QDs exhibited a response behavior that is different from that of undoped ones. It is believed that the large build-in population of holes plays a crucial role in determining the transient reflection spectrum.
► The optical properties of undoped and p-doped InAs/GaAs quantum dots are compared. ► Micro-photoluminescence and pump–probe measurements are employed to characterize quantum dots. ► The effects of p-type doping on the transition energy and carrier dynamics are clarified. ► The build-in holes leads to higher transition energies and faster carrier dynamics.
