| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592906 | Solid State Communications | 2011 | 6 Pages |
Effect of laser field intensity on exciton binding energies is investigated in a GaAs/ GaAlAs double quantum well system. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of laser field. The laser field induced photoionization cross-section for the exciton placed at the centre of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross-section on photon energy is carried out for the excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The intense laser field dependence of interband absorption coefficient is investigated. The results show that the exciton binding energy, interband emission energy, the photoionization cross-section and the interband absorption coefficient depend strongly on the well width and the laser field intensity. Our results are compared with the other existing literature available.
► Laser field intensity on exciton binding energies is investigated in a double quantum well system. ► The laser induced interband emission energy as a function of well width is calculated. ► The dependence of the photoionization cross-section on photon energy is carried out.
