| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592968 | Solid State Communications | 2012 | 4 Pages |
Abstract
Structures and stabilities of Zn adsorption and incorporation at InN surfaces are systematically investigated by first-principles calculations. An InN (0001)–(2×2) surface covered by 3/4 monolayer Zn adsorption atoms at the H3 sites is found to be energetically favorable. The calculated surface energies demonstrate the stability of Zn-incorporated surfaces. Substitutional defects may act as a potential source for the bulk and surface p-type behavior in Zn-doped InN.
► We investigated theoretically the stability of the Zn dopants at InN surface. ► Zn atoms prefer to adsorb at the H3 sites of InN (0001) surface. ► Zn may be a potential candidate for p-type InN.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jianli Wang, Gang Tang, X.S. Wu, Mingqiang Gu,