| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1592989 | Solid State Communications | 2012 | 4 Pages |
Abstract
⺠Geometric diodes showing electrical asymmetry were formed from asymmetric graphene structures. ⺠The polarity of the electrical asymmetry is a function of carrier type. ⺠Carrier type and hence diode polarity reversed with shifting applied gate voltage. ⺠The graphene geometric diode operates at a frequency of at least 28 THz. ⺠The reversible diodes can be applied to ultra-high-speed digital memory and flip-flops.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Garret Moddel, Zixu Zhu, Sachit Grover, Saumil Joshi,