Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1593043 | Solid State Communications | 2011 | 4 Pages |
The effect of nitrogen doping on optical properties and electronic structures of SrZrO3 (SZO) films was investigated both experimentally and theoretically. A shift of the absorption edge to the longer wavelength, i.e., the narrowing of the band gap caused by nitrogen doping was observed. The first-principles calculations revealed that the band gap reduced in nitrogen-doped SZO because of the localized N 2p states above O 2p states and the bottom of conduction band of Zr 4d shifting to a lower energy.
Research highlights► A shift of the absorption edge to longer wavelength in N-doped SrZrO3 film.► The experimental results show a 0.08 eV reduction of band gap in N-doped film.► The first-principles calculations are used to analyze the impact of N-doping.► N 2p states localized above O 2p states and Zr 4d shifted to a lower energy.