| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593065 | Solid State Communications | 2012 | 4 Pages |
Abstract
⺠The nature and origin of the defects leading to compensation in HgCdTe:As was studied. ⺠The electronic features of VHg-related defects were investigated in detail. ⺠Our results confirm the important role of VHg in doping and activation of As in HgCdTe.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H. Duan, Y.Z. Dong, Z.P. Lin, Y. Huang, X.S. Chen, W. Lu,