Possible effects of oxygen in Te-rich Σ3 (112) grain boundaries in CdTe

Using density functional theory calculation, we show that oxygen (O) exhibits an interesting effect in CdTe. The Te atoms with dangling bonds in a Te-rich rich Σ3 (112) grain boundary (GB) create deep gap states due to strong interaction between Te atoms. However, when such a Te atom is substituted by an O atom, the deep gap states can be shifted toward the valence band, making the site no longer a harmful non-radiative recombination center. We find that O atoms prefer energetically substituting these Te atoms and induce significant lattice relaxation due to their smaller atomic size and stronger electronegativity, which effectively reduces the anion–anion interaction. Consequently, the deep gap states are shifted to lower energy regions close to or even below the top of the valence band.

► The presence of O in the anion-rich grain boundaries exhibits beneficial effect. ► The presence of O atoms cleanses the deep gap states at grain boundary. ► Substitutional O at an anion site is favored at grain boundary compared to the bulk region. ► Suggests a unique approach to tame harmful grain boundaries in polycrystalline solar cell materials.