| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593075 | Solid State Communications | 2012 | 5 Pages |
Abstract
⺠InN thin films were grown on GaN templates at different temperatures by PAMBE. ⺠InN films were characterized by XRD, Hall effect, absorption and Raman spectroscopy. ⺠The optical band gap of InN films was found to be carrier concentrations dependent. ⺠Carrier concentrations dependent optical band gap of InN films was described by the k.p model. ⺠The transport properties of InN/GaN Schottky junction were studied.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, A.T. Kalghatgi, S.B. Krupanidhi,