| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593102 | Solid State Communications | 2011 | 4 Pages |
Abstract
We have investigated the effects of the nitrogen and indium concentrations on the photoionization cross-section and binding energy of shallow donor impurities in Ga1−xInxNyAs1−y/GaAs quantum wires. The numerical calculations are performed in the effective mass approximation, using a variational method. We observe that incorporation of small amounts of nitrogen and indium leads to significant changes of the photoionization cross-section and binding energy.
► We have calculated the binding energy of a donor impurity in GaInNAs/GaAs QWW. ► The change in the photoionization cross-section with N–In concentrations is studied. ► Both parameters are found to be strongly depend on the N and In concentrations.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
U. Yesilgul, E. Kasapoglu, H. Sarı, I. Sökmen,