| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593132 | Solid State Communications | 2012 | 5 Pages |
BaBi4Ti4O15 (BBT) ceramic was synthesized using mixed oxide route and the structural and electrical properties were investigated systematically. The structural studies confirmed it to be an n=4 member of the Aurivillius oxide. A broad dielectric peak with frequency dependent dielectric maximum temperature was observed. The dielectric relaxation obeyed the Vogel–Fulcher relation wherein f0=8.37E+14 Hz, Ea=0.13 eV, and Tf=608.18 K. The diffuseness parameter γ established the relaxor nature and it was attributed to the A-site cationic disorder. The specimen exhibited the excellent reproducibility in the measurements of displacement current, a remnant polarization of 5.4 μC/cm2, and a coercive field of 4.03 MV/m. The room temperature piezoelectric coefficient d33 was found to be 23 pC/N and the field-induced strain S was about 0.018% at the 8 MV/m electric field.
► The electric properties of BBT were investigated systemically. ► The nature of dielectric relaxation for BBT was discussed. ► The BBT have higher room temperature piezoelectric permittivity of 23 pC/N. ► The electrical field-induced strain curve (S–E) for BBT was detected.
