Magnetic domain wall motion by current injection in CoPt nanowires consisting of notches

Magnetic domain wall behaviors in CoPt nanowires consisting of multiple pairs of notches were investigated by experimental measurements as well as by micromagnetic modeling. The nanowires were fabricated by ion-beam sputter deposition and e-beam lithography where one to three triangular shaped notches were installed at an interval of 1 μm. Based on the evaluated I–V characteristics, we observed that differential resistance curves showed two peaks with a local minimum at around zero current; the domain wall was trapped between the current ranges within these two peaks. As the number of notch was increased, the resistance of the nanowire became larger.

► Magnetic domain wall behaviors in CoPt nanowires with notches were investigated. ► Differential resistance curve showed symmetric peaks where the domain wall was trapped. ► As the number of notch was increased, the amount of current required to release the trapped domain wall became larger.