| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593212 | Solid State Communications | 2011 | 4 Pages |
Abstract
⺠We use the NEGF method and the tight-binding Hamiltonian model. ⺠We investigate the effect of inelastic electron-phonon interactions on TMR. ⺠We use the wide-band approximation for FM electrodes. ⺠We find that the electron-phonon interaction leads to reduction of the TMR ratio.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
M. Ashhadi, S.A. Ketabi,