| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593303 | Solid State Communications | 2011 | 4 Pages |
We report unipolar resistive switching in ultrathin films of chemically produced graphene (reduced graphene oxide) and multiwalled carbon nanotubes. The two-terminal devices with yield >99% are made at room temperature by forming continuous films of graphene of thickness ∼20 nm on indium tin oxide coated glass electrode, followed by metal (Au or Al) deposition on the film. These memory devices are nonvolatile, rewritable with ON/OFF ratios up to ∼ 105 and switching times up to 10 μs. The devices made of MWNT films are rewritable with ON/OFF ratios up to ∼400. The resistive switching mechanism is proposed to be nanogap formation and filamentary conduction paths.
► We demonstrate unipolar resistive switching in ultrathin films of reduced graphene oxide and carbon nanotubes. ► The ON–OFF ratio in graphene devices varies from ∼ 106 to 102 depending on pulse widths of the applied voltage pulses. ► The ON–OFF ratio for nanotube devices is ∼40. ► The switching mechanism is proposed in terms of nanogap formation.
