Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1593478 | Solid State Communications | 2010 | 4 Pages |
Abstract
The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor–acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of ED=40meV and EA=320meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Christof P. Dietrich, Martin Lange, Gabriele Benndorf, Holger von Wenckstern, Marius Grundmann,