Article ID Journal Published Year Pages File Type
1593478 Solid State Communications 2010 4 Pages PDF
Abstract

The stoichiometry of pulsed-laser deposited, nominally undoped ZnO thin films can be controlled via oxygen partial pressure during growth. Samples grown under zinc-rich conditions at pressures below 0.02 mbar show the formation of a donor–acceptor pair recombination at 3.104 eV. Temperature- and excitation-dependent photoluminescence studies revealed structural defects, namely zinc interstitials and zinc vacancies, with donor and acceptor binding energies of ED=40meV and EA=320meV, respectively, to be accountable for this recombination. The findings were confirmed via calculations within the quantum defect model.

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Physical Sciences and Engineering Materials Science Materials Science (General)
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