| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593590 | Solid State Communications | 2011 | 4 Pages |
Abstract
⺠InN thin films were grown on GaN templates by PAMBE. ⺠The transport properties of InN/GaN Schottky junctions were studied. ⺠The barrier height and the ideality factor were found to be temperature dependent. ⺠Inhomogeneity of the barrier at the heterostructure interface is observed. ⺠The inhomogeneous behavior is explained with a Gaussian distribution of barrier heights.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Basanta Roul, Thirumaleshwara N. Bhat, Mahesh Kumar, Mohana K. Rajpalke, Neeraj Sinha, A.T. Kalghatgi, S.B. Krupanidhi,