Article ID Journal Published Year Pages File Type
1593656 Solid State Communications 2009 4 Pages PDF
Abstract

We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the band-edge transition energy are evaluated using different models. It has been found that the semi-empirical relation based on phonon-dispersion related spectral function leads to an excellent fit to the experimental data.

Related Topics
Physical Sciences and Engineering Materials Science Materials Science (General)
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