Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1593656 | Solid State Communications | 2009 | 4 Pages |
Abstract
We present an experimental investigation of temperature dependent band-gap shrinkage in GaN using photoluminescence spectroscopy. The near-band-edge transition energy shifts to lower energy with increasing temperature. The parameters that describe the temperature-dependent red-shift of the band-edge transition energy are evaluated using different models. It has been found that the semi-empirical relation based on phonon-dispersion related spectral function leads to an excellent fit to the experimental data.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Niladri Sarkar, Subhasis Ghosh,