| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593680 | Solid State Communications | 2010 | 5 Pages |
Abstract
The dielectric response of pulsed laser ablated Bi1.5Zn1.0Nb1.5O7 (BZN) thin films are investigated within the temperature range of 300-660Â K and frequency range of 100Â Hz-100Â kHz. Thin film exhibited a strong dielectric relaxation behavior. A sharp rise in dielectric constant of BZN thin film at high temperatures is related to disorder in cation and anion lattices. Observed dielectric relaxation implies a redistribution of charges within the unit cell. This phenomenon suggests that the large change in dielectric constant is due to a dynamical rise of dipolar fluctuations in the unit cell. XPS spectra of BZN (A2B2O6Oâ²) cubic pyrochlore, confirm that the relaxation corresponds to the ionic hopping among the A and Oâ² positions of several local potential minima. Barrier height for hopping is distributed between 0 and 0.94 eV. The O 1s spectrum confirms presence of two types of oxygen in BZN thin film. The disorder in charge neutralized thin film is correlated with XPS spectra.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Jitendra Singh, S.B. Krupanidhi,