| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593712 | Solid State Communications | 2011 | 4 Pages |
Abstract
⺠Fe-doped amorphous Si films were successfully prepared by cosputtering. ⺠Films with (controllable) Fe concentrations in the 0-2 at. % range were obtained. ⺠The experimental investigation also took into account different atomic structures (as induced by the realization of thermal annealing treatments). ⺠Both [Fe] and thermal annealing are critical to the achievement of near-infrared light emission due to β- FeSi2.
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Materials Science (General)
Authors
I.B. Gallo, A.R. Zanatta,