Article ID Journal Published Year Pages File Type
1593743 Solid State Communications 2010 4 Pages PDF
Abstract
Zinc self-diffusion along the growth direction was analyzed for the isotopic multilayer ZnO thin film ((64ZnO/68ZnO)664ZnO) deposited by pulsed laser deposition. The isotopic distribution was measured using a secondary ion mass spectrometry. The amplitude of the 64Zn abundance in the depth profile was reduced by annealing at 993 K for several hours due to interdiffusion between the 64ZnO and 68ZnO layers. The diffusion profiles at the isotopic interfaces were analyzed using a periodic equation. The obtained zinc self-diffusion coefficients at several isotopic interfaces along the growth direction showed that the self-diffusion coefficients increased towards the film/substrate interface. A similar trend was also found in the lateral direction. The variation among the self-diffusion coefficients was related to the film thicknesses at the analysis positions. Since zinc self-diffusion is controlled by a vacancy-mediated mechanism, the variation in zinc diffusivity along the growth direction can be attributed to the effect of compressive biaxial stress. These findings are useful for producing high-quality ZnO devices.
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Physical Sciences and Engineering Materials Science Materials Science (General)
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