| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593821 | Solid State Communications | 2011 | 4 Pages |
Schottky-barrier ultraviolet (UV) detectors based on ZnO-nanowires (NWs) were fabricated with Pt as electrodes in this investigation. The ZnO NWs synthesized by the hydrothermal method were characterized by field-emission scanning electron microscopy (FE-SEM), Raman and PL spectroscopy. Photoelectric properties under 254 and 365 nm UV light were investigated. It is found that the photo-response properties of the devices under 365 nm UV light are better than those under 254 nm UV light, which is further illustrated by light transmission theory, energy-band diagram and absorption spectra. The results demonstrate that ZnO NWs detectors with selectivity to near-UV (NUV) light are promising candidates in photoelectric devices.
► The Schottky-barrier NUV detectors based on ZnO-NWs are successfully fabricated.► The detectors are of high wavelength selectivity to 365 nm rather than 254 nm light.► Photo-response is explained by light transmission theory and energy-band diagram.► The NUV ZnO NWs detectors can be fabricated in a simple, low-cost way.
