| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593841 | Solid State Communications | 2011 | 4 Pages |
A correlation is presented for the high frequency ε∞ε∞ and static εoεo dielectric constants of AIIBV I and AIIIBV semiconductors with the zinc blende structure. The high frequency ε∞ε∞ and static εoεo dielectric constants can be represented by an empirical linear relation that is a simple function of melting temperature TmTm, atomic volume ΩΩ and product of ionic charges (Z1Z2Z1Z2). Values of high frequency ε∞ε∞ and static εoεo dielectric constants of AIIBV I and AIIIBV zinc blende semiconductors exhibit a linear relationship when plotted against the kBTm/ΩkBTm/Ω (kB=Boltzmann’s constantkB=Boltzmann’s constant), but fall on two straight lines according to the product of ionic charges of the compounds. The calculated results are compared with available experimental data and previous calculations based on phenomenological models.
► We present dielectric constants for zinc blende solids with the help of ionic charge theory. ► In the proposed model, only the kBTm/ΩkBTm/Ω normalization is required as input. ► The method turns out to be widely applicable.
