| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593864 | Solid State Communications | 2011 | 4 Pages |
Abstract
The effect of low-energy electron-beam (e-beam) irradiation on the InGaN-related cathodoluminescence in multiple quantum well (MQW) InGaN/GaN light-emitting diode (LED) structures has been studied. It is shown that the e-beam exposure leads to an increase of emission intensity and to a formation of new blue-shifted emission bands. The changes observed were explained by the enhancement of In diffusion stimulated by excess carrier recombination.
Research highlights► Low-energy e-beam irradiation increases the cathodoluminescence intensity of InGaN/GaN LED. ► New emission bands appear under e-beam irradiation. ► Enhanced In diffusion probably takes place under e-beam irradiation.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
N.M. Shmidt, P.S. Vergeles, E.E. Yakimov, E.B. Yakimov,