Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1593937 | Solid State Communications | 2010 | 5 Pages |
Abstract
The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological band anticrossing model (BAC) which we extended in order to include the magnetic field and electron–phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy ħωcħωc.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
P.M. Krstajić, F.M. Peeters, M. Helm,