| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593962 | Solid State Communications | 2009 | 6 Pages |
The structural, magnetic and transport properties measurements carried out on Co thin films deposited by electron beam evaporation on GaAs substrate as a function of layer thickness ranging from 50 Å to 1000 Å are presented here. Structural measurements show the film to be amorphous in nature at lower thickness which becomes crystalline at higher thickness. Magnetic measurements show an increase in saturation magnetization (MS) with film thickness. MS values are found to vary from 521 emu/cm3 to 1180 emu/cm3 for thicknesses ranging from 50 Å to 1000 Å. The coercivity and saturation field value shows a systematic decrease up to 600 Å thickness and increase thereafter. Various microstructural parameters were also calculated using GIXRR technique. A clear grain growth is observed in AFM technique with film thickness and its influence on transport properties was also seen. Different surface morphology and magnetic domain structures were obtained on different thin film samples by AFM and MFM techniques, respectively. XPS measurements reveal formation of CoAs phase at the interface between Co and GaAs. All these results are discussed and interpreted in detail in this communication.
