| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1593993 | Solid State Communications | 2010 | 4 Pages |
Abstract
We present a novel computational method by combining the finite element method and the method of moving asymptotes to study the dislocation-induced composition profile in alloy semiconductors. Segregated cylindrical nanoscale regions appear around the dislocation core. We find that the dominant driving force of non-uniform composition is strain contribution. Moreover, the method can be applied to the dislocated nanoscale heterostructures which are inaccessible by atomic treatment.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H. Ye, P.F. Lu, Z.Y. Yu, D.L. Wang, Z.H. Chen, Y.M. Liu, S.M. Wang,