| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594022 | Solid State Communications | 2010 | 4 Pages |
Abstract
Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annealing. X-ray photoelectron spectroscopy (XPS) measurement suggests that Tb4+ ions decrease compared with Tb3+ ions after annealing treatment. Oxygen atoms in the AlBON:Tb film are dissociated from Tb and bonded to boron atoms by annealing treatment. It is possible that decrease in Tb4+ ions leads to increase in the PL intensity by annealing treatment.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Keiko Masumoto, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino,