Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594061 | Solid State Communications | 2010 | 4 Pages |
Abstract
We discuss the mechanism responsible for the observed improvement in the structural properties of In-doped GaSe, a layered material of great current interest. Formation energy calculations show that by tuning the Fermi energy, In can substitute for Ga or can go as an interstitial charged defect (Ini3+). We find that Ini3+ dramatically increases the shear stiffness of GaSe, explaining the observed enhancement in the rigidity of In-doped p-GaSe. The mechanism responsible for rigidity enhancement discussed here is quite general and applicable to a large class of layered solids with weak interlayer bonding.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Zs. Rák, S.D. Mahanti, Krishna C. Mandal, N.C. Fernelius,