Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594103 | Solid State Communications | 2010 | 4 Pages |
Abstract
Using X-ray diffraction, photoconductivity and temperature dependent conductivity measurements, we investigate GaN:Gd layers grown by reactive molecular-beam epitaxy with the Gd concentration ranging from 7Ã1015 to 8.5Ã1018Â cmâ3. Our study reveals that the incorporation of Gd produces a large concentration of defects in the GaN lattice. The density of these defects generated even with a Gd concentration as low as 7Ã1015Â cmâ3 is estimated to be as high as â1019Â cmâ3. The defect state is found to be located â450Â meV away from the band edge.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
J.K. Mishra, S. Dhar, O. Brandt,