| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594168 | Solid State Communications | 2011 | 4 Pages |
Abstract
Detailed theoretical analysis of the temperature dependence of two-dimensional electron gas mobility data in GaAs1−xNx/Al0.38Ga0.62As samples (x=0x=0, 0.1% and 0.4%) shows that, as xx increases, the dislocation density and the number of ionized impurities in the potential well increase by a factor of ∼ ×300 and ∼ ×500, respectively.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Hosein Eshghi, Mahnaz Mootabian,