| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594186 | Solid State Communications | 2010 | 4 Pages |
Abstract
The second-order transverse acoustic mode and amorphous Raman modes, originating from a continuous random network and medium range ordering (MRO), in high energy light ion (HELI) irradiated GaAs are investigated. The change in the phonon density of states of the transverse acoustic mode phonon distinguishes the effect of HELI irradiation on highly resistive undoped and chromium-doped GaAs. The boson mode, originating from the MRO of the system, has been identified and a model based on phonon-fracton scattering has been used for the explanation of this “boson mode”. The spectral dimension, correlation length and the scaling factor, with which the elastic constant varies with length in MRO regions in GaAs, are estimated.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Shramana Mishra, D. Kabiraj, Anushree Roy, Subhasis Ghosh,