Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594188 | Solid State Communications | 2010 | 4 Pages |
Abstract
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Shun-Tsung Lo, Kuang Yao Chen, T.L. Lin, Li-Hung Lin, Dong-Sheng Luo, Y. Ochiai, N. Aoki, Yi-Ting Wang, Zai Fong Peng, Yiping Lin, J.C. Chen, Sheng-Di Lin, C.F. Huang, C.-T. Liang,