Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594190 | Solid State Communications | 2010 | 4 Pages |
Abstract
Phosphorus-doped ZnO nanocombs with double-sided symmetry were prepared by a modified thermal-evaporation process using phosphorus pentoxide as the dopant source. Scanning electron microscopy and transmission electron microscopy reveal that the single-crystal teeth in the doped nanocombs grow along [0002] direction and that the formation of the tapered tip should be related to the lattice strain caused by the incorporation of phosphorous. Raman spectra further reveal the influence of phosphorus doping on the lattice dynamics of ZnO, and display the amphoteric nature of phosphorus dopant. The p-type doping is confirmed by the temperature-dependent photoluminescence spectra, and the acceptor binding energy is estimated to be about 165 meV.
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Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Donghua Fan, Rong Zhang, Yang Li,