Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594238 | Solid State Communications | 2008 | 4 Pages |
Abstract
β-Ga2O3nanostructured materials have been obtained on Si(111) substrates by annealing the Ga2O3/V films at different temperatures. X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum were used to analyze the structure, morphology and optical properties of β-Ga2O3 nanostructured films. These properties were investigated particularly as a function of annealing temperature. Our results indicate that the β-Ga2O3 nanorods annealed at 950 âC have the best morphology and crystallinity. These nanorods are pure monoclinic Ga2O3 structures with lengths of about 5 μm and diameters of about 180 nm, which is conducive to the application of nanodevices. Finally, the growth mechanism is also discussed briefly.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Zhaozhu Yang, Chengshan Xue, Huizhao Zhuang, Gongtang Wang, Jinhua Chen, Hong Li, Lixia Qin, Dongdong Zhang, Yinglong Huang,