| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1594288 | Solid State Communications | 2010 | 4 Pages |
The fundamental properties of CdFe2O4 semiconductor thin film have been investigated. CdFe2O4 polycrystalline powder was synthesized by a co-precipitation–calcination process, and its thin film was prepared on a glass substrate by the pulsed laser deposition (PLD) method. The transmittance and reflectance spectra of the thin film indicate that the compound is an indirect bandgap material with Eg=1.97Eg=1.97 eV. Its absorption coefficients are larger than 104 cm−1 when the wavelength is shorter than 700 nm. The electrical conductivity of the CdFe2O4 thin film was measured at different temperatures, its conductivity activation energy is about 71.9 meV. The relationship between CdFe2O4 semiconductor properties and its microstructure was discussed.
