Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1594394 | Solid State Communications | 2010 | 4 Pages |
Abstract
Strontium titanate films with high aa-axis orientation [a(100)=94.1%][a(100)=94.1%] and random orientation were deposited on (111) Pt/Ti/ SiO2/Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 °C. X-ray diffraction found that the degree of aa-axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
Xiaofei Wang, Xiaomei Lu, Huifeng Bo, Yaoyang Liu, Yanchi Shen, Xiaobo Wu, Wei Cai, Yi Kan, Chao Zhang, Yunfei Liu, Fengzhen Huang, Jinsong Zhu,