Article ID Journal Published Year Pages File Type
1594394 Solid State Communications 2010 4 Pages PDF
Abstract

Strontium titanate films with high aa-axis orientation [a(100)=94.1%][a(100)=94.1%] and random orientation were deposited on (111) Pt/Ti/ SiO2/Si substrates by a concentration controlling of the precursor solution during the metal organic deposition process. Topography of samples was investigated by atomic force microscopy after annealing at 800 °C. X-ray diffraction found that the degree of aa-axis orientation increased with increasing annealing temperature. The leakage current and the dielectric property were strongly dependent on the film orientation, and the possible causes of orientation dependence were discussed.

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Physical Sciences and Engineering Materials Science Materials Science (General)
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